Cite
A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility.
MLA
Zhou, Xintian, et al. “A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility.” IEEE Transactions on Electron Devices, vol. 66, no. 6, June 2019, pp. 2551–56. EBSCOhost, https://doi.org/10.1109/TED.2019.2908970.
APA
Zhou, X., Jia, Y., Hu, D., & Wu, Y. (2019). A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility. IEEE Transactions on Electron Devices, 66(6), 2551–2556. https://doi.org/10.1109/TED.2019.2908970
Chicago
Zhou, Xintian, Yunpeng Jia, Dongqing Hu, and Yu Wu. 2019. “A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility.” IEEE Transactions on Electron Devices 66 (6): 2551–56. doi:10.1109/TED.2019.2908970.