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A Charge Plasma-Based Monolayer Transition Metal Dichalcogenide Tunnel FET.
- Source :
-
IEEE Transactions on Electron Devices . Jun2019, Vol. 66 Issue 6, p2837-2843. 7p. - Publication Year :
- 2019
-
Abstract
- In this paper, a charge plasma-based monolayer transition metal dichalcogenide (TMD) tunneling field-effect transistor (TFET) is investigated by solving self-consistent 3-D Poisson and Schrodinger equations in nonequilibrium Green’s function (NEGF) framework. We propose a work function engineered charge plasma-based dual-metal source TFET (DMS TFET) structure for an optimum performance of the device. The proposed TFET structure demonstrates superior performance than the conventional charge plasma TFETs in terms of ${I}_{{\scriptscriptstyle {\text {ON}}}}$ , ${I}_{{\scriptscriptstyle {\text {ON}}}}/{I}_{{\scriptscriptstyle {\text {OFF}}}}$ ratio, and subthreshold slope (SS). It provides ${I}_{{\scriptscriptstyle {\text {ON}}}}$ of $222~\mu \text{A}/\mu \text{m}$ , ${I}_{{\scriptscriptstyle {\text {ON}}}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio of $2.22\times 10^{{5}}$ , a minimum SS of 42.41 mV/decade, and an average SS of 54.15 mV/decade for three-decade increase in drain current (${I}_{\text {DS}}$). The performance of the device is observed at different channel lengths. Based on this analysis, a device design guideline for sub-10-nm channel length TFETs is presented in the paper. Finally, the circuit level metrics of the proposed structure are estimated by calculating delay and energy-delay product of a 45-stage inverter chain. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 137270826
- Full Text :
- https://doi.org/10.1109/TED.2019.2909182