Back to Search
Start Over
A Study of Solution-Processed Zinc–Tin-Oxide Semiconductors for Thin-Film Transistors.
- Source :
-
IEEE Transactions on Electron Devices . Jun2019, Vol. 66 Issue 6, p2631-2636. 6p. - Publication Year :
- 2019
-
Abstract
- Thin-film transistors (TFTs) fabricated using solution-processed zinc–tin-oxide (ZTO) semiconductor thin films as the channel layers are proposed in this paper. Effect of the ZTO annealing temperature on the TFT performance is studied. Significant reduction of oxygen-vacancy and chlorine residue contents in the ZTO semiconductor can be obtained when the annealing temperatures are 500 °C–700 °C. The ZTO semiconductor with the annealing process at 600 °C in air can give an optimal ZTO TFT having a low leakage current of 10−12 A and a high ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio of 3 $\times \,\,10^{7}$. The subthreshold swing is 0.39 V/decade corresponding to an interface trap density of $1.2\times \,\,10^{12}\,\,$ cm−2eV−1. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 137270840
- Full Text :
- https://doi.org/10.1109/TED.2019.2910347