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Improving Negative-Bias-Temperature-Stress Stability for Thin-Film Transistors by Doping Mg Into ScInO Semiconductor.
- Source :
-
IEEE Transactions on Electron Devices . Jun2019, Vol. 66 Issue 6, p2620-2623. 4p. - Publication Year :
- 2019
-
Abstract
- Thin-film transistors (TFTs) with ScInO or MgScInO semiconductors were fabricated with the annealing temperature of only 150 °C. Compared with ScInO TFT, MgScInO TFT exhibited much better stability under negative-bias temperature stress (NBTS) at 60 °C with negative turn-on voltage (${V}_{ \mathrm{\scriptscriptstyle ON}}$) shift of −0.6 V at the initial stress stage (≤;900 s) and then positive $V_{ \mathrm{\scriptscriptstyle ON}}$ shift (>900 s). First-principles calculations show that the oxygen vacancies (${V}_{\text {O}}$) tend to be bounded with Mg and form Mg– ${V}_{\text {O}}$ pairs with activating (or binding) energy of greater than 0.1369 eV, which is ascribed to the NBTS stability improvement for MgScInO TFT. [ABSTRACT FROM AUTHOR]
- Subjects :
- *TRANSISTORS
*THIN film transistors
*SEMICONDUCTORS
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 137270842
- Full Text :
- https://doi.org/10.1109/TED.2019.2911635