Cite
Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory.
MLA
Lin, Chun-Chu, et al. “Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory.” IEEE Transactions on Electron Devices, vol. 66, no. 6, June 2019, pp. 2595–99. EBSCOhost, https://doi.org/10.1109/TED.2019.2912502.
APA
Lin, C.-C., Chen, P.-H., Chen, M.-C., Chang, T.-C., Lin, C.-Y., Zheng, H.-X., Chen, C.-K., Huang, W.-C., Chen, W.-C., Huang, H.-C., Tsai, T.-M., Ma, X.-H., Hao, Y., & Sze, S. M. (2019). Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory. IEEE Transactions on Electron Devices, 66(6), 2595–2599. https://doi.org/10.1109/TED.2019.2912502
Chicago
Lin, Chun-Chu, Po-Hsun Chen, Min-Chen Chen, Ting-Chang Chang, Chih-Yang Lin, Hao-Xuan Zheng, Chun-Kuei Chen, et al. 2019. “Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory.” IEEE Transactions on Electron Devices 66 (6): 2595–99. doi:10.1109/TED.2019.2912502.