An Injection Enhanced LIGBT on Thin SOI Layer Compatible With CMOS Process.

In this paper, we present a lateral injection enhanced insulated gate bipolar transistor (LIEGT) and investigate its mechanism. The LIEGT features a recessed trench at the cathode side of the drift region formed by LOCal oxidation of silicon (LOCOS) process. The recessed trench suppresses holes being extracted and enhances the electron injection, thus contributing to a very low loss in the ON-state. The ON-state voltage (${V}_{ \mathrm{\scriptscriptstyle ON}}$) of the LIEGT is reduced by 24% at the current density of 200 A/cm2 and the saturation current is 40% higher than that of the conventional lateral insulated gate bipolar transistor (LIGBT). The LIEGT exhibits an improved tradeoff between ${V}_{ \mathrm{\scriptscriptstyle ON}}$ and turnoff loss (${E}_{ \mathrm{\scriptscriptstyle OFF}}$). For the same ${V}_{ \mathrm{\scriptscriptstyle ON}}$ , the ${E}_{ \mathrm{\scriptscriptstyle OFF}}$ is decreased by 38% compared with that of the conventional LIGBT. [ABSTRACT FROM AUTHOR]