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ESD Reliability Study of a-Si:H Thin-Film Transistor Technology: Physical Insights and Technological Implications.
- Source :
-
IEEE Transactions on Electron Devices . Jun2019, Vol. 66 Issue 6, p2624-2630. 7p. - Publication Year :
- 2019
-
Abstract
- In this paper, we present the detailed physical insights into the electrostatic discharge (ESD) behavior of hydrogenated amorphous silicon (a-Si:H)-based thin-film transistor (TFT) technology. Device failure under ESD conditions is studied in detail using electrical and optical techniques. Device degradation under ESD timescales is studied using real-time capacitance–voltage and a spatially variant degradation behavior is reported. Variations in material properties are studied before and after device failure using Raman spectroscopy. Device dimension-dependent failure mechanism is explored. Impact of stressing conditions and presence of top passivation on failure behavior is also explored. Failure physics of technologically relevant device architectures including diode-connected transistors (gated diodes) and drain underlap TFTs and their increased ESD robustness is discussed. Finally, ESD behavior of a-Si:H-based TFTs is discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 137270867
- Full Text :
- https://doi.org/10.1109/TED.2019.2913040