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Intermodulation Linearity Characteristics of 14-nm RF FinFETs.
- Source :
-
IEEE Transactions on Electron Devices . Jun2019, Vol. 66 Issue 6, p2520-2526. 7p. - Publication Year :
- 2019
-
Abstract
- This paper investigates the RF intermodulation characteristics of transistors from a 14-nm RF FinFET technology using experimental measurements, circuit simulation with Berkeley short-channel IGFET model-common multi-gate (BSIM-CMG), and Volterra series. Linearity sweet spots with respect to gate voltage and RF power, as well as its drain voltage dependence, are examined. Key BSIM-CMG model parameters required for simultaneous fitting of dc I–V, S-parameters, and intermodulation distortion are identified and demonstrated. Volterra series analysis shows that distortion resulting from ${V}_{\textsf {DS}}$ derivatives of ${I}_{\textsf {DS}}$ dominates at most biases. A minimum third-order intercept gate voltage ${V}_{\textsf {GS,IP3}}$ of 0.5 V is observed, compared with 0.7 V in a 28-nm high- ${k}$ metal-gate planar device. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 137270868
- Full Text :
- https://doi.org/10.1109/TED.2019.2912516