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Mechanisms of Frequency-Dependent Conductivity of Mesoporous Silicon at γ Irradiation with Small Doses.
- Source :
-
Technical Physics Letters . Jun2019, Vol. 45 Issue 6, p533-536. 4p. - Publication Year :
- 2019
-
Abstract
- Abstract—The effect of low-dose γ radiation on the mechanisms of low-frequency conductivity of mesoporous silicon has been studied. It has been shown that γ irradiation preserves the hopping character of conductivity at a change of the frequency of phonon lattice vibrations, a decrease in the size of the hop, and a shift of the level of the capture of traps to the Fermi level in the band gap, which makes the structure with mesoporous silicon irradiated by γ radiation promising for the creation of multifunctional resistive and capacitive devices. [ABSTRACT FROM AUTHOR]
- Subjects :
- *PHONONS
*SILICON
*FERMI level
*IRRADIATION
Subjects
Details
- Language :
- English
- ISSN :
- 10637850
- Volume :
- 45
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Technical Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 137559866
- Full Text :
- https://doi.org/10.1134/S1063785019060063