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The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs.
- Source :
-
IEEE Transactions on Nuclear Science . Jul2019, Vol. 66 Issue 7, p1682-1687. 6p. - Publication Year :
- 2019
-
Abstract
- A focused pulsed X-ray beam is used to determine how the redistribution of the electric field by the gate-connected field plate affects single-event transient (SET) susceptibility of an AlGaN/GaN Schottky-gate HEMT on SiC. SETs generated by scanning the X-ray beam across the HEMT depend strongly on the presence of the field plate, radiation strike location, bias conditions, and X-ray photon energy. For the particular HEMT we tested, the gate-connected field plate reduces the electric-field strength near the edge of the gate by a factor of approximately 2, which results in faster decaying transients and less collected charge. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 66
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 137646706
- Full Text :
- https://doi.org/10.1109/TNS.2019.2910493