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Optimizing the Properties of InGaZnOx Thin Film Transistors by Adjusting the Adsorbed Degree of Cs+ Ions.
- Source :
-
Materials (1996-1944) . Jul2019, Vol. 12 Issue 14, p2300-2300. 1p. 3 Diagrams, 3 Charts, 7 Graphs. - Publication Year :
- 2019
-
Abstract
- To improve the performance of amorphous InGaZnOx (a-IGZO) thin film transistors (TFTs), in this thesis, Cs+ ions adsorbed IGZO (Cs-IGZO) films were prepared through a solution immersion method at low temperature. Under the modification of surface structure and oxygen vacancies concentrations of a-IGZO film, with the effective introduction of Cs+ ions into the surface of a-IGZO films, the transfer properties and stability of a-IGZO TFTs are greatly improved. Different parameters of Cs+ ion concentrations were investigated in our work. When the Cs+ ions concentration reached 2% mol/L, the optimized performance Cs-IGZO TFT was obtained, showing the carrier mobility of 18.7 cm2 Vā1 sā1, the OFF current of 0.8 × 10ā10 A, and the threshold voltage of 0.2 V, accompanied by the threshold voltage shifts of 1.3 V under positive bias stress for 5000 s. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 12
- Issue :
- 14
- Database :
- Academic Search Index
- Journal :
- Materials (1996-1944)
- Publication Type :
- Academic Journal
- Accession number :
- 137681274
- Full Text :
- https://doi.org/10.3390/ma12142300