Cite
Ohmic contacts simultaneously formed on n-type and p-type 4H-SiC at low temperature.
MLA
He, Yanjing, et al. “Ohmic Contacts Simultaneously Formed on N-Type and p-Type 4H-SiC at Low Temperature.” Journal of Alloys & Compounds, vol. 805, Oct. 2019, pp. 999–1003. EBSCOhost, https://doi.org/10.1016/j.jallcom.2019.07.126.
APA
He, Y., Lv, H., Tang, X., Song, Q., Zhang, Y., Han, C., Guo, T., He, X., Zhang, Y., & Zhang, Y. (2019). Ohmic contacts simultaneously formed on n-type and p-type 4H-SiC at low temperature. Journal of Alloys & Compounds, 805, 999–1003. https://doi.org/10.1016/j.jallcom.2019.07.126
Chicago
He, Yanjing, Hongliang Lv, Xiaoyan Tang, Qingwen Song, Yimeng Zhang, Chao Han, Tao Guo, Xiaoning He, Yimen Zhang, and Yuming Zhang. 2019. “Ohmic Contacts Simultaneously Formed on N-Type and p-Type 4H-SiC at Low Temperature.” Journal of Alloys & Compounds 805 (October): 999–1003. doi:10.1016/j.jallcom.2019.07.126.