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Velocity saturation in La-doped BaSnO3 thin films.
- Source :
-
Applied Physics Letters . 8/26/2019, Vol. 115 Issue 9, pN.PAG-N.PAG. 5p. 1 Chart, 5 Graphs. - Publication Year :
- 2019
-
Abstract
- BaSnO3, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining the device performance. We report on the experimental measurement of the electron saturation velocity in La-doped BaSnO3 thin films for a range of doping densities. The predicted saturation velocities based on a simple LO-phonon emission mode, using an effective LO phonon energy of 120 meV show good agreement with the measurements of velocity saturation in La-doped BaSnO3 films. Density-dependent saturation velocity in the range of 1.8 × 107 cm/s reducing to 2 × 106 cm/s is predicted for δ-doped BaSnO3 channels with carrier densities ranging from 1013 cm−2 to 2 × 1014 cm−2, respectively. These results are expected to aid the informed design of BaSnO3 as an active material for high-charge density electronic transistors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 115
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 138400800
- Full Text :
- https://doi.org/10.1063/1.5097791