Cite
Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer.
MLA
Sun, Hui, et al. “Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer.” IEEE Transactions on Electron Devices, vol. 66, no. 8, Aug. 2019, pp. 3290–95. EBSCOhost, https://doi.org/10.1109/TED.2019.2919246.
APA
Sun, H., Wang, M., Yin, R., Chen, J., Xue, S., Luo, J., Hao, Y., & Chen, D. (2019). Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer. IEEE Transactions on Electron Devices, 66(8), 3290–3295. https://doi.org/10.1109/TED.2019.2919246
Chicago
Sun, Hui, Maojun Wang, Ruiyuan Yin, Jianguo Chen, Shuai Xue, Jiansheng Luo, Yilong Hao, and Dongmin Chen. 2019. “Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer.” IEEE Transactions on Electron Devices 66 (8): 3290–95. doi:10.1109/TED.2019.2919246.