Cite
Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides.
MLA
Aguirre, Fernando Leonel, et al. “Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides.” IEEE Transactions on Electron Devices, vol. 66, no. 8, Aug. 2019, pp. 3349–55. EBSCOhost, https://doi.org/10.1109/TED.2019.2922555.
APA
Aguirre, F. L., Rodriguez-Fernandez, A., Pazos, S. M., Sune, J., Miranda, E., & Palumbo, F. (2019). Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides. IEEE Transactions on Electron Devices, 66(8), 3349–3355. https://doi.org/10.1109/TED.2019.2922555
Chicago
Aguirre, Fernando Leonel, Alberto Rodriguez-Fernandez, Sebastian Matias Pazos, Jordi Sune, Enrique Miranda, and Felix Palumbo. 2019. “Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides.” IEEE Transactions on Electron Devices 66 (8): 3349–55. doi:10.1109/TED.2019.2922555.