Cite
Strain-Engineered Asymmetrical Superlattice Si/Si1–xGex Nano-ATT $\langle$ p++-n-n−-n++ $\rangle$ Oscillator: Enhanced Photo-Sensitivity in Terahertz Domain.
MLA
Chatterjee, Sulagna, and Moumita Mukherjee. “Strain-Engineered Asymmetrical Superlattice Si/Si1–xGex Nano-ATT $\langle$ P++-n-N−-N++ $\rangle$ Oscillator: Enhanced Photo-Sensitivity in Terahertz Domain.” IEEE Transactions on Electron Devices, vol. 66, no. 8, Aug. 2019, pp. 3659–67. EBSCOhost, https://doi.org/10.1109/TED.2019.2923108.
APA
Chatterjee, S., & Mukherjee, M. (2019). Strain-Engineered Asymmetrical Superlattice Si/Si1–xGex Nano-ATT $\langle$ p++-n-n−-n++ $\rangle$ Oscillator: Enhanced Photo-Sensitivity in Terahertz Domain. IEEE Transactions on Electron Devices, 66(8), 3659–3667. https://doi.org/10.1109/TED.2019.2923108
Chicago
Chatterjee, Sulagna, and Moumita Mukherjee. 2019. “Strain-Engineered Asymmetrical Superlattice Si/Si1–xGex Nano-ATT $\langle$ P++-n-N−-N++ $\rangle$ Oscillator: Enhanced Photo-Sensitivity in Terahertz Domain.” IEEE Transactions on Electron Devices 66 (8): 3659–67. doi:10.1109/TED.2019.2923108.