Cite
Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs.
MLA
He, Jiabei, et al. “Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs.” IEEE Transactions on Electron Devices, vol. 66, no. 8, Aug. 2019, pp. 3453–58. EBSCOhost, https://doi.org/10.1109/TED.2019.2924675.
APA
He, J., Wei, J., Yang, S., Wang, Y., Zhong, K., & Chen, K. J. (2019). Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs. IEEE Transactions on Electron Devices, 66(8), 3453–3458. https://doi.org/10.1109/TED.2019.2924675
Chicago
He, Jiabei, Jin Wei, Song Yang, Yuru Wang, Kailun Zhong, and Kevin J. Chen. 2019. “Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs.” IEEE Transactions on Electron Devices 66 (8): 3453–58. doi:10.1109/TED.2019.2924675.