Cite
A Study of Effects of Metal Gate Composition on Performance in Advanced n-MOSFETs.
MLA
Lin, Yun-Hsuan, et al. “A Study of Effects of Metal Gate Composition on Performance in Advanced N-MOSFETs.” IEEE Transactions on Electron Devices, vol. 66, no. 8, Aug. 2019, pp. 3286–89. EBSCOhost, https://doi.org/10.1109/TED.2019.2925104.
APA
Lin, Y.-H., Lu, Y.-H., Chang, T.-C., Liao, J.-C., Lin, C.-Y., Jin, F.-Y., Lin, Y.-S., Ciou, F.-M., Chang, Y.-C., Chang, K.-C., Hung, W.-C., Chen, K.-H., Yeh, C.-H., & Kuo, T.-T. (2019). A Study of Effects of Metal Gate Composition on Performance in Advanced n-MOSFETs. IEEE Transactions on Electron Devices, 66(8), 3286–3289. https://doi.org/10.1109/TED.2019.2925104
Chicago
Lin, Yun-Hsuan, Ying-Hsin Lu, Ting-Chang Chang, Jih-Chien Liao, Chein-Yu Lin, Fu-Yuan Jin, Yu-Shan Lin, et al. 2019. “A Study of Effects of Metal Gate Composition on Performance in Advanced N-MOSFETs.” IEEE Transactions on Electron Devices 66 (8): 3286–89. doi:10.1109/TED.2019.2925104.