Electric-field tuning of nonvolatile resistance change and magnetic properties of LaMnO3/PMN-PT(0 1 1) heterostructure.

• In situ reversible tuning of resistance is achieved in LaMnO 3 /PMN-PT(0 1 1) structure. • Non-180° domain switching-induced strain causes nonvolatile resistance tuning. • In-plane tensile stain contributes to the weakened magnetization. The electric-field control of resistance change (Δ R / R) and magnetic properties has been investigated in the LaMnO 3 (LMO)/0.71Pb(Mg 1/3 Nb 2/3)O 3 -0.29PbTiO 3 (PMN-PT)(0 1 1) heterostructure. When the unipolar electric field (E) increases beyond the coercive field of PMN-PT, the Δ R / R vs E curve transforms from a loop-like behavior to a butterfly-like one. The electric-field-induced non-linear strain effect in the PMN-PT substrate realizes the modulation between low and high resistance states at room temperature. Moreover, different freezing temperatures of the LMO film are observed as the PMN-PT substrate is in the fully negative (P r -) and partially positive (P r / / ) polarization states. The observation of less magnetization for P r / / state than that for P r - state indicates that the in-plane tensile strain is beneficial to the Jahn-Teller distortion. [ABSTRACT FROM AUTHOR]