Cite
Observation of the Stacking Faults in In0.53Ga0.47As by Electron Channeling Contrast Imaging.
MLA
Hsu, Po-Chun (Brent), et al. “Observation of the Stacking Faults in In0.53Ga0.47As by Electron Channeling Contrast Imaging.” Physica Status Solidi. A: Applications & Materials Science, vol. 216, no. 17, Sept. 2019, p. N.PAG. EBSCOhost, https://doi.org/10.1002/pssa.201900293.
APA
Hsu, P.-C. (Brent), Han, H., Simoen, E., Merckling, C., Eneman, G., Mols, Y., Collaert, N., & Heyns, M. (2019). Observation of the Stacking Faults in In0.53Ga0.47As by Electron Channeling Contrast Imaging. Physica Status Solidi. A: Applications & Materials Science, 216(17), N.PAG. https://doi.org/10.1002/pssa.201900293
Chicago
Hsu, Po-Chun (Brent), Han Han, Eddy Simoen, Clement Merckling, Geert Eneman, Yves Mols, Nadine Collaert, and Marc Heyns. 2019. “Observation of the Stacking Faults in In0.53Ga0.47As by Electron Channeling Contrast Imaging.” Physica Status Solidi. A: Applications & Materials Science 216 (17): N.PAG. doi:10.1002/pssa.201900293.