Characteristics and Influence Factors of Radiated Disturbance Induced by IGBT Switching.

The setup for testing radiated disturbance induced by insulated gate bipolar transistor (IGBT) and auxiliary circuits was established. The radiated disturbance characteristics of auxiliary circuits and methods to suppress the radiated electromagnetic interference (EMI) were experimentally studied. The radiated EMI bandwidth of the auxiliary circuit was concentrated in the range 30–300 MHz. The mathematical model for an IGBT was proposed based on the setup, which includes all the structures of the IGBT in detail. The electric fields were calculated from the IGBT model using the method of moments. Moreover, the characteristics of the radiated disturbances due to the IGBT operation and the effects of metal on the radiated electric fields were experimentally and calculatingly studied in the frequency range 1–30 MHz. The metal shielded box of drive can increase the radiated electric fields by approximately 10–30 dB in the range 1–30 MHz. The electric fields for all the frequencies decreased rapidly with the increase of distance. Additionally, methods to shield the IGBT in order to suppress the radiated EMI were proposed. The effective radiated EMI reduction from a shielded net was approximately 20 dB, and that of a shielded box was around 30 dB. [ABSTRACT FROM AUTHOR]