Molecular beam epitaxy growth of GaSb1-xBix without rotation.

GaSb 1-x Bi x thin film was grown on a 2 inch GaSb substrate by molecular beam epitaxy (MBE) without substrate rotation. Bi composition is found to vary from 2.76% to 3.98% across the wafer. The distribution of Bi content is mainly determined by spatial non-uniformity of Sb/Ga flux ratio, while Bi flux has slightly influence. Ostwald ripening process is confirmed to be reason for bigger Bi droplets via Bi surface diffusion. With the increase of Sb/Ga flux ratio, Ostwald ripening process is suppressed. At high Bi flux, excess Ga atoms accumulate on surface and form droplets. • Ostwald ripening of Bi droplets via Bi surface diffusion is confirmed. With the increase of Sb/Ga flux ratio, the Bi diffusion length decreases and Ostwald ripening is suppressed. • Ga droplets co-exist with the Bi droplets and their density increases with the decrease of the Sb/Ga flux ratio and the increase of the Bi flux. [ABSTRACT FROM AUTHOR]