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Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection.
- Source :
-
Applied Physics Letters . 9/16/2019, Vol. 115 Issue 12, pN.PAG-N.PAG. 4p. 2 Diagrams, 2 Graphs. - Publication Year :
- 2019
-
Abstract
- A heterojunction photodiode was fabricated from Bi doped Cs2SnCl6 nanoparticles (Cs2SnCl6:Bi NPs) spin-coated on an epitaxially grown GaN substrate. With the back illumination configuration, the heterojunction photodiode demonstrated excellent narrow-band UV sensing capability with a full wavelength of half maximum of 18 nm and a maximum detectivity of 1.2 × 1012 jones, which is promising for biomedical applications. In addition to the excellent narrow band UV sensitivity, the device also demonstrated a large linear dynamic range of 71 decibels (dB) and a fast photoresponse speed (a rise time of 0.75 μs and a fall time of 0.91 μs). The excellent performance is attributed to excellent carrier separation efficiency at the heterojunction interface and improved carrier collection efficiency through the multi-walled carbon nanotube (MWCNT) network. All the above advantages are of great importance for commercial deployment of perovskite-based photodetectors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 115
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 138756846
- Full Text :
- https://doi.org/10.1063/1.5123226