Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs.

MLA

Chen, Xuesong, et al. “Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs.” IEEE Transactions on Electron Devices, vol. 66, no. 9, Sept. 2019, pp. 3748–55. EBSCOhost, https://doi.org/10.1109/TED.2019.2926742.

APA

Chen, X., Boumaiza, S., & Wei, L. (2019). Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs. IEEE Transactions on Electron Devices, 66(9), 3748–3755. https://doi.org/10.1109/TED.2019.2926742

Chicago

Chen, Xuesong, Slim Boumaiza, and Lan Wei. 2019. “Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs.” IEEE Transactions on Electron Devices 66 (9): 3748–55. doi:10.1109/TED.2019.2926742.