Cite
Impact of Fin Width on Tri-Gate GaN MOSHEMTs.
MLA
Ma, Jun, et al. “Impact of Fin Width on Tri-Gate GaN MOSHEMTs.” IEEE Transactions on Electron Devices, vol. 66, no. 9, Sept. 2019, pp. 4068–74. EBSCOhost, https://doi.org/10.1109/TED.2019.2925859.
APA
Ma, J., Santoruvo, G., Nela, L., Wang, T., & Matioli, E. (2019). Impact of Fin Width on Tri-Gate GaN MOSHEMTs. IEEE Transactions on Electron Devices, 66(9), 4068–4074. https://doi.org/10.1109/TED.2019.2925859
Chicago
Ma, Jun, Giovanni Santoruvo, Luca Nela, Taifang Wang, and Elison Matioli. 2019. “Impact of Fin Width on Tri-Gate GaN MOSHEMTs.” IEEE Transactions on Electron Devices 66 (9): 4068–74. doi:10.1109/TED.2019.2925859.