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Silicon Carbide Bipolar Analog Circuits for Extreme Temperature Signal Conditioning.

Authors :
Roy, Sajib
Rashid, Arman Ur
Abbasi, Affan
Murphree, Robert C.
Hossain, MD Maksudul
Faruque, Asif
Metreveli, Alex
Zetterling, Carl-Mikael
Fraley, John
Sparkman, Brett
Mantooth, H. Alan
Source :
IEEE Transactions on Electron Devices. Sep2019, Vol. 66 Issue 9, p3764-3770. 7p.
Publication Year :
2019

Abstract

This paper presents functional high-temperature analog circuits in silicon carbide bipolar technology. The circuits will collectively form the analog signal conditioning block for a wireless telemetry system in an extreme environment (above 400°C). The signal conditioning block is composed of a low dc gain operational amplifier, a negative voltage charge pump (CP), an RC oscillator, and a voltage regulator. The circuits are tested up to 450°C. The measured open-loop gain for the amplifier at 450°C is 30 dB. The regulator provides approximately 9-V output at 450°C for a fixed load current of up to 18 mA and an applied reference of 4.5 V. The negative voltage CP requires an oscillating signal at its input, which is provided by the RC cross-coupled oscillator. The CP provides about −5 V at 450°C. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
66
Issue :
9
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
138938163
Full Text :
https://doi.org/10.1109/TED.2019.2928484