Cite
Investigation of Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Under Switching Operation in Schottky-Type p-GaN Gate HEMTs.
MLA
Wang, Yuru, et al. “Investigation of Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Under Switching Operation in Schottky-Type p-GaN Gate HEMTs.” IEEE Transactions on Electron Devices, vol. 66, no. 9, Sept. 2019, pp. 3789–94. EBSCOhost, https://doi.org/10.1109/TED.2019.2930315.
APA
Wang, Y., Wei, J., Yang, S., Lei, J., Hua, M., & Chen, K. J. (2019). Investigation of Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Under Switching Operation in Schottky-Type p-GaN Gate HEMTs. IEEE Transactions on Electron Devices, 66(9), 3789–3794. https://doi.org/10.1109/TED.2019.2930315
Chicago
Wang, Yuru, Jin Wei, Song Yang, Jiacheng Lei, Mengyuan Hua, and Kevin J. Chen. 2019. “Investigation of Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Under Switching Operation in Schottky-Type p-GaN Gate HEMTs.” IEEE Transactions on Electron Devices 66 (9): 3789–94. doi:10.1109/TED.2019.2930315.