Cite
Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode.
MLA
Li, Guoli, et al. “Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode.” IEEE Transactions on Electron Devices, vol. 66, no. 9, Sept. 2019, pp. 4001–07. EBSCOhost, https://doi.org/10.1109/TED.2019.2930244.
APA
Li, G., Andre, N., Chen, Q., Wang, H., Francis, L. A., Zeng, Y., Liao, L., & Flandre, D. (2019). Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode. IEEE Transactions on Electron Devices, 66(9), 4001–4007. https://doi.org/10.1109/TED.2019.2930244
Chicago
Li, Guoli, Nicolas Andre, Qi Chen, Huiru Wang, Laurent A. Francis, Yun Zeng, Lei Liao, and Denis Flandre. 2019. “Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode.” IEEE Transactions on Electron Devices 66 (9): 4001–7. doi:10.1109/TED.2019.2930244.