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Reverse-Bias Stress-Induced Electrical Parameters Instability in 4H-SiC JBS Diodes Terminated Nonequidistance FLRs.
- Source :
-
IEEE Transactions on Electron Devices . Sep2019, Vol. 66 Issue 9, p3935-3939. 5p. - Publication Year :
- 2019
-
Abstract
- In this article, the breakdown voltage (${V}_{\text {BR}}$) shift of 4H-SiC Junction Barrier Schottky (JBS) diodes terminated by optimum nonequidistant field limiting rings (FLRs) subject to reverse-bias stress (RBS) has been investigated, and the corresponding mechanisms are studied in-depth. It can be observed that ${V}_{\text {BR}}$ gradually increases with increasing stress time, but there is no obvious shift of the forward voltage (${V}_{F}$). The increment in the magnitude of ${V}_{\text {BR}}$ induced by RBS testing is shown to depend strongly on the degree of applied reverse-bias voltage. The physical mechanism of ${V}_{\text {BR}}$ shift has been investigated and explained by means of numerical technical computer-aided design (T-CAD) simulations. Our analysis shows that the hole injection and trapping into SiO2 at the FLR terminal area are identified to be the main cause, resulting in the increase of ${V}_{\text {BR}}$. Besides, a simple model is proposed to explain the behavior of ${V}_{\text {BR}}$ instability. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 138938192
- Full Text :
- https://doi.org/10.1109/TED.2019.2931737