Cite
Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H–SiC(0 0 0 1)
MLA
Aït-Mansour, K., et al. “Ge Quantum Dots on a Large Band Gap Semiconductor: The First Growth Stages on 4H–SiC(0 0 0 1).” Physica E, vol. 23, no. 3/4, July 2004, pp. 428–34. EBSCOhost, https://doi.org/10.1016/j.physe.2003.12.139.
APA
Aït-Mansour, K., Dentel, D., Bischoff, J. L., Kubler, L., Diani, M., Barski, A., Derivaz, M., & Noé, P. (2004). Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H–SiC(0 0 0 1). Physica E, 23(3/4), 428–434. https://doi.org/10.1016/j.physe.2003.12.139
Chicago
Aït-Mansour, K., D. Dentel, J.L. Bischoff, L. Kubler, M. Diani, A. Barski, M. Derivaz, and P. Noé. 2004. “Ge Quantum Dots on a Large Band Gap Semiconductor: The First Growth Stages on 4H–SiC(0 0 0 1).” Physica E 23 (3/4): 428–34. doi:10.1016/j.physe.2003.12.139.