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Study of deep level defects in InGaP/InGaAs-GaAsP/InGaAsN quantum well based multi-junction solar cell using finite element analysis.
- Source :
-
Superlattices & Microstructures . Jun2019, Vol. 130, p28-37. 10p. - Publication Year :
- 2019
-
Abstract
- Degradation analysis of a quantum well-dilute nitride based multi-junction solar cell is presented using a 2D numerical device simulator: APSYS. By taking carrier removal effects into consideration, the proposed device exhibits strong electric field uniformity within the intrinsic region of the p-i-n middle cell. The electron traps are defined in the top InGaP and bottom InGaAsN base region considering 1 MeV electron irradiation in geostationary orbits. Considering thermionic emission, tunneling and SRH lifetime an effective lifetime value of 16.7 ps is considered in the middle MQW region. A record efficiency value of 38% and 44% is obtained at 1-sun and 500-sun AM0 spectrum respectively. The same efficiency value dropped by 4% by introducing a realistic SRV (1 × 104 cm s−1) and trap concentration values (1 × 1016 cm−3). Finally, we illustrate the influence of traps and lifetime on overall cell J sc , V oc , η, and power density. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07496036
- Volume :
- 130
- Database :
- Academic Search Index
- Journal :
- Superlattices & Microstructures
- Publication Type :
- Academic Journal
- Accession number :
- 139240467
- Full Text :
- https://doi.org/10.1016/j.spmi.2019.04.009