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Thermal Model for Insulated Gate Bipolar Transistor Module.
- Source :
-
IEEE Transactions on Power Electronics . Jul2004, Vol. 19 Issue 4, p902-907. 6p. - Publication Year :
- 2004
-
Abstract
- A thermal resistor-capacitor (RG) model is introduced for the power insulated gate bipolar transistor (IGBT) modules used in a three-phase inverter. The parameters of the model are extracted from the experimental data for the transient thermal impedance from-junction-to-case Zje and case-to-ambient Zca. The accuracy of the RC model is verified by comparing its predictions with those resulting from the three-dimensional finite element method simulation. The parameter extraction algorithm is easy to adapt to other types of power modules in an industrial application environment. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08858993
- Volume :
- 19
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Power Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 13929690
- Full Text :
- https://doi.org/10.1109/TPEL.2004.830089