Cite
Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors.
MLA
Krishna, Athith, et al. “Investigation of Nitrogen Polar P-Type Doped GaN/AlxGa(1-x)N Superlattices for Applications in Wide-Bandgap p-Type Field Effect Transistors.” Applied Physics Letters, vol. 115, no. 17, Oct. 2019, p. N.PAG. EBSCOhost, https://doi.org/10.1063/1.5124326.
APA
Krishna, A., Raj, A., Hatui, N., Keller, S., & Mishra, U. K. (2019). Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors. Applied Physics Letters, 115(17), N.PAG. https://doi.org/10.1063/1.5124326
Chicago
Krishna, Athith, Aditya Raj, Nirupam Hatui, Stacia Keller, and Umesh K. Mishra. 2019. “Investigation of Nitrogen Polar P-Type Doped GaN/AlxGa(1-x)N Superlattices for Applications in Wide-Bandgap p-Type Field Effect Transistors.” Applied Physics Letters 115 (17): N.PAG. doi:10.1063/1.5124326.