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High frequency H-diamond MISFET with output power density of 182 mW/mm at 10 GHz.
- Source :
-
Applied Physics Letters . 11/4/2019, Vol. 115 Issue 19, pN.PAG-N.PAG. 4p. 1 Diagram, 5 Graphs. - Publication Year :
- 2019
-
Abstract
- RF power characteristics of hydrogen-terminated diamond metal-insulator-semiconductor field-effect transistors operating at 10 GHz have been reported, and an output power density of 182 mW/mm has been achieved. The diamond devices were fabricated by using a self-aligned process combined with 0.1 μm gate-length T-shaped gates. A high quality atomic layer deposition Al2O3 film with low leakage current was deposited as a gate dielectric by using H2O as the oxidant at a low temperature of 90 °C. The direct current output characteristics of the devices were measured by applying gate voltage in opposite directions, and a maximum drain current density of 741 mA/mm has been obtained. By small-signal measurements, the diamond device demonstrates a high extrinsic cutoff frequency fT of 66 GHz and a maximum frequency of oscillation fmax of 55 GHz. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 115
- Issue :
- 19
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 139586782
- Full Text :
- https://doi.org/10.1063/1.5125771