Cite
Thermally stable epitaxial ZrN/carrier-compensated Sc0.99Mg0.01N metal/semiconductor multilayers for thermionic energy conversion.
MLA
Garbrecht, Magnus, et al. “Thermally Stable Epitaxial ZrN/Carrier-Compensated Sc0.99Mg0.01N Metal/Semiconductor Multilayers for Thermionic Energy Conversion.” Journal of Materials Science, vol. 55, no. 4, Feb. 2020, pp. 1592–602. EBSCOhost, https://doi.org/10.1007/s10853-019-04127-x.
APA
Garbrecht, M., McCarroll, I., Yang, L., Bhatia, V., Biswas, B., Rao, D., Cairney, J. M., & Saha, B. (2020). Thermally stable epitaxial ZrN/carrier-compensated Sc0.99Mg0.01N metal/semiconductor multilayers for thermionic energy conversion. Journal of Materials Science, 55(4), 1592–1602. https://doi.org/10.1007/s10853-019-04127-x
Chicago
Garbrecht, Magnus, Ingrid McCarroll, Limei Yang, Vijay Bhatia, Bidesh Biswas, Dheemahi Rao, Julie M. Cairney, and Bivas Saha. 2020. “Thermally Stable Epitaxial ZrN/Carrier-Compensated Sc0.99Mg0.01N Metal/Semiconductor Multilayers for Thermionic Energy Conversion.” Journal of Materials Science 55 (4): 1592–1602. doi:10.1007/s10853-019-04127-x.