An Improved Active Crosstalk Suppression Method for High-Speed SiC MOSFETs.

Silicon carbide (SiC) power electronic devices feature the advantages of fast switching speed, low conduction loss, and reliable operation in high temperature environment, etc. Due to the differences of parasitic parameters and threshold voltage between SiC mosfets and Si mosfets, crosstalk problem is easy to be triggered when SiC mosfets are applied to bridge topologies. In this paper, the crosstalk effect with different parasitic parameters of SiC mosfets is firstly analyzed, and then an improved active crosstalk suppression method for high-speed SiC mosfets is proposed. By using the proposed method, when the crosstalk occurs, the crosstalk voltage will be decreased by reducing the equivalent gate resistance and increasing the equivalent gate-source capacitance in an active way. Consequently, the crosstalk problem can be suppressed without affecting the switching speed. To verify the effectiveness of the proposed method, a prototype of a buck–boost converter is built and the proposed modified gate driver is applied to the half-bridge topology. Comparative experimental study is conducted and the crosstalk voltage is analyzed. The experimental results verify that effective crosstalk suppression is achieved. [ABSTRACT FROM AUTHOR]