Investigation on Electronic Structures and Magnetic Properties of (Mn, Ga) Co-doped SnO2.

The electronic structures and magnetic properties of (Mn, Ga) co-doped SnO2 are studied by the first-principles calculations in full-potential linearized augmented plane wave formalism within generalized gradient approximations. We found that the doped system favors the ferromagnetic state and room-temperature ferromagnetism can be expected in it. The origin of ferromagnetism can be attributed to p-d exchange interactions as Mn-O-Mn. Ga acts as acceptor in (Mn, Ga) co-doped SnO2 host and can donate one hole, increasing the carrier concentration and thus leading to a more stable ferromagnetic state. These results suggest a recipe obtaining promising dilute magnetic semiconductor by doping nonmagnetic elements in SnO2 matrix. [ABSTRACT FROM AUTHOR]