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Field emission enhancement of amorphous carbon films by nitrogen-implantation
- Source :
-
Carbon . Nov2004, Vol. 42 Issue 11, p2309-2314. 6p. - Publication Year :
- 2004
-
Abstract
- Effect of nitrogen-implantation on electron field emission properties of amorphous carbon films has been examined. Raman and X-ray photoelectron spectroscopy measurements reveal different types of C–N bonds formed upon nitrogen-implantation. The threshold field is lowered from 14 to 4 V/μm with increasing the dose of implantation from 0 to 5 × 1017 cm-2 and the corresponding effective work function is estimated to be in the range of 0.01–0.1 eV. From the perspective of tetrahedron bond formation, a mechanism for the nitrogen-lowered work function is proposed, suggesting that both the nitrogen nonbonding (lone pair) and the lone-pair-induced carbon antiboding (dipole) states are responsible for lowering the work function and hence the threshold field. [Copyright &y& Elsevier]
- Subjects :
- *CHEMICAL bonds
*AMORPHOUS substances
*NITROGEN
*CARBON
*PHOTOELECTRON spectroscopy
Subjects
Details
- Language :
- English
- ISSN :
- 00086223
- Volume :
- 42
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Carbon
- Publication Type :
- Academic Journal
- Accession number :
- 13985318
- Full Text :
- https://doi.org/10.1016/j.carbon.2004.05.012