Cite
Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3.
MLA
Ilik, Sadik, et al. “Modeling of Total Ionizing Dose Degradation on 180-Nm n-MOSFETs Using BSIM3.” IEEE Transactions on Electron Devices, vol. 66, no. 11, Nov. 2019, pp. 4617–22. EBSCOhost, https://doi.org/10.1109/TED.2019.2926931.
APA
Ilik, S., Kabaoglu, A., Sahin Solmaz, N., & Yelten, M. B. (2019). Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3. IEEE Transactions on Electron Devices, 66(11), 4617–4622. https://doi.org/10.1109/TED.2019.2926931
Chicago
Ilik, Sadik, Aykut Kabaoglu, Nergiz Sahin Solmaz, and Mustafa Berke Yelten. 2019. “Modeling of Total Ionizing Dose Degradation on 180-Nm n-MOSFETs Using BSIM3.” IEEE Transactions on Electron Devices 66 (11): 4617–22. doi:10.1109/TED.2019.2926931.