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Breakdown Walkout in Polarization-Doped Vertical GaN Diodes.
- Source :
-
IEEE Transactions on Electron Devices . Nov2019, Vol. 66 Issue 11, p4597-4603. 7p. - Publication Year :
- 2019
-
Abstract
- We demonstrate the avalanche capability and the existence of breakdown walkout in GaN-on-GaN vertical devices with polarization doping. By means of combined electrical and optical characterization, we demonstrate the following original results: 1) vertical p-n junctions with polarization doping have avalanche capability; 2) stress in avalanche regime induces an increase in breakdown voltage, referred to as breakdown walkout; 3) this process is fully-recoverable, thus being related to a trapping mechanism; 4) temperature-dependent measurements of the breakdown walkout identify $\text{C}_{N}$ defects responsible for this process; and 5) capacitance deep level transient spectroscopy (C-DLTS) and deep level optical spectroscopy (DLOS) confirm the presence of residual carbon in the devices under test. A possible model to explain the avalanche walkout is then proposed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 140084562
- Full Text :
- https://doi.org/10.1109/TED.2019.2943014