Publisher's Note: "Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence" [Appl. Phys. Lett. 115, 213502 (2019)].

Authors :: Jewel, Mohi Uddin
Alam, Md Didarul
Mollah, Shahab
Hussain, Kamal
Wheeler, Virginia
Eddy, Charles
Gaevski, Mikhail
Simin, Grigory
Chandrashekhar, MVS
Khan, Asif
Source :: Applied Physics Letters. 12/9/2019, Vol. 115 Issue 24, p1-1. 1p.
Publication Year :: 2019
Abstract: Publisher's Note: "Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence" [Appl. Phys. This article was originally published online on 19 November 2019 with author MVS Chandrashekhar incorrectly spelled. All online versions of the article were corrected on 20 November 2019. [Extracted from the article]

Subjects :: *CATHODOLUMINESCENCE
*DIELECTRICS
*GATES
*AUTHOR-publisher relations
*TRAPPING
*INDIUM gallium zinc oxide

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