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Publisher's Note: "Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence" [Appl. Phys. Lett. 115, 213502 (2019)].
- Source :
-
Applied Physics Letters . 12/9/2019, Vol. 115 Issue 24, p1-1. 1p. - Publication Year :
- 2019
-
Abstract
- Publisher's Note: "Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence" [Appl. Phys. This article was originally published online on 19 November 2019 with author MVS Chandrashekhar incorrectly spelled. All online versions of the article were corrected on 20 November 2019. [Extracted from the article]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 115
- Issue :
- 24
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 140381041
- Full Text :
- https://doi.org/10.1063/1.5139436