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DC to 6-Ghz high-gain low-noise GaInp/GaAs HBT direct-coupled amplifiers with and without emitter-capacitive peaking.
- Source :
-
Microwave & Optical Technology Letters . 10/5/2004, Vol. 43 Issue 1, p67-69. 3p. 1 Color Photograph, 1 Diagram, 4 Graphs. - Publication Year :
- 2004
-
Abstract
- High-gain shunt-series shunt-shunt wideband amplifiers with and without emitter-peaking capacitors are demonstrated by using GaInP/GaAs HBT technology. Experimental results show that the power gain is 28 dB from DC to 6 GHz for a wideband amplifier without emitter-peaking capacitors. On the other hand, a wideband amplifier with emitter-peaking capacitors can increase the gain bandwidth up to 8 GHz at the cost of lower input/output return loss. Both circuits have similar power and noise performance. The noise figures of both designs are less than 2.8 dB for frequencies below 6 GHz. OP1dB and OIP3 are 7 and 20 dBm at 2 GHz, respectively. Total current consumption is 67 mA at 5-V supply voltage for both wideband amplifiers. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 67–69, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20377 [ABSTRACT FROM AUTHOR]
- Subjects :
- *ELECTRONIC amplifiers
*CAPACITORS
*WIRELESS communications
*BANDWIDTHS
*MICROWAVES
Subjects
Details
- Language :
- English
- ISSN :
- 08952477
- Volume :
- 43
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Microwave & Optical Technology Letters
- Publication Type :
- Academic Journal
- Accession number :
- 14054439
- Full Text :
- https://doi.org/10.1002/mop.20377