Admittance Characteristics of Au/p-Si Schottky Diode with Damage Induced by Reactive Ion Etching.

Reactive ion etching (RIE) is known to alter electrical characteristics by creating a damaged layer on the surface of the etched substance. An Au/p-Si Schottky diode was formed on a silicon surface which was etched by RE using CF4 gas. It was found that excess dc conductance and inductive susceptance were observed in the current voltage (I-V) and the admittance frequency (Y-f) characteristics under forward bias conditions, respectively. These results are expLained by assuming the existence of deep-level traps induced by RJE in the depletion region of the diode. Assuming a damage depth distribution of 10 nm, the experimental values of inductive susceptance are able to calculate by following parameters of the deep-level traps induced by RIE; Er Ev 0.33 (eV) and NT = 1 × 1019 (cm-3). [ABSTRACT FROM AUTHOR]