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Design, Analysis, and Discussion of Short Circuit and Overload Gate-Driver Dual-Protection Scheme for 1.2-kV, 400-A SiC MOSFET Modules.
- Source :
-
IEEE Transactions on Power Electronics . Mar2020, Vol. 35 Issue 3, p3054-3068. 15p. - Publication Year :
- 2020
-
Abstract
- This paper proposes short circuit and overload gate-driver dual-protection scheme based on the parasitic inductance between the Kelvin- and power-source terminals of high-current SiC mosfet modules. The paper presents a comprehensive analysis of the two schemes in question, including worst-case analysis used to assess their parametric dependence due to manufacturing tolerances and temperature variations, as well as the in-depth design procedure that can be generally applied to any power module containing a Kelvin-source. For verification, a compact 1.2-kV, 400-A half-bridge module integrating the two protection circuits was developed. The results obtained demonstrate a response time within tens of nanoseconds, and effectively validate their functionality under short circuit and overload scenarios. Finally, a 100-kW, 400-V dc three-phase voltage-source inverter was used to demonstrate the gate-driver with integrated protection functions under 105°C ambient temperature conditions. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08858993
- Volume :
- 35
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Power Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 140827921
- Full Text :
- https://doi.org/10.1109/TPEL.2019.2930048