Back to Search
Start Over
Degradation of Ka-Band GaN LNA Under High-Input Power Stress: Experimental and Theoretical Insights.
- Source :
-
IEEE Transactions on Electron Devices . Dec2019, Vol. 66 Issue 12, p5091-5096. 6p. - Publication Year :
- 2019
-
Abstract
- A 23–30-GHz gallium nitride (GaN) low-noise amplifier (LNA) with a noise figure (NF) of 0.87–1.51 dB is presented in this article. This LNA was fabricated with 100-nm gate-length GaN-on-silicon (GaN/Si) microwave monolithic integrated circuit (MMIC) process. The linear gain is 14–17 dB within the band. For investigating the robustness of this LNA, 1-W continuous wave (CW) at 27 GHz was stressed on the input port of the LNA. The gain decreased, and the NF increased after stress. Experimental research and first-principles calculations were carried out to investigate the physical origin of the degradation. The dehydrogenation of VGa-H3 complexes causes the decrease of gain, and the creation of VAl-H4 in the AlN barrier is supposed to cause an increase of NF. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 141052484
- Full Text :
- https://doi.org/10.1109/TED.2019.2947311