Cite
BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm.
MLA
Razzak, Towhidur, et al. “BaTiO3/Al0.58Ga0.42N Lateral Heterojunction Diodes with Breakdown Field Exceeding 8 MV/Cm.” Applied Physics Letters, vol. 116, no. 2, Jan. 2020, pp. 1–5. EBSCOhost, https://doi.org/10.1063/1.5130590.
APA
Razzak, T., Chandrasekar, H., Hussain, K., Lee, C. H., Mamun, A., Xue, H., Xia, Z., Sohel, S. H., Rahman, M. W., Bajaj, S., Wang, C., Lu, W., Khan, A., & Rajan, S. (2020). BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm. Applied Physics Letters, 116(2), 1–5. https://doi.org/10.1063/1.5130590
Chicago
Razzak, Towhidur, Hareesh Chandrasekar, Kamal Hussain, Choong Hee Lee, Abdullah Mamun, Hao Xue, Zhanbo Xia, et al. 2020. “BaTiO3/Al0.58Ga0.42N Lateral Heterojunction Diodes with Breakdown Field Exceeding 8 MV/Cm.” Applied Physics Letters 116 (2): 1–5. doi:10.1063/1.5130590.