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Self-assembly engineering toward large-area defect-rich TiO2(B) nanosheets-based free-standing films for high-performance lithium-ion batteries.

Authors :
Dong, Cheng
Li, Ang
Zhang, Liguo
Dong, Wenjun
Gao, Hongyi
Jia, Xilai
Chen, Xiao
Mi, Hongtian
Wang, Ge
Chen, Xiao-Bo
Source :
Journal of Power Sources. Feb2020, Vol. 448, pN.PAG-N.PAG. 1p.
Publication Year :
2020

Abstract

Nanosheets with large exposed surface and high chemical activity are of paramount significance for catalysis, gas sensing and energy storage. However, assembling them into large-area free-standing films and preventing aggregation of individual nanosheets remain a great challenge. Herein, an efficient strategy is proposed to assemble defect-rich TiO 2 (B) nanosheets into a 3D-scaffold structured free-standing film, which can preserve high chemical activity and prevent their aggregation. The inherent pores of Teflon lining are employed as load-bearing base to construct 3D scaffolds, and then, a rapid dissolution-recrystallization hydrothermal process is developed to fabricate defect-rich TiO 2 (B) nanosheets (~5 nm in thickness) on the 3D scaffolds. The numerous defects are crucial for boosting high rate performance within LIBs. The hierarchical 3D-scaffold structure endows the nanosheets-based electrode with outstanding cycling stability (96.1% retention after 6000 cycles at 6.7 A g−1), which hits a record high in terms of capacity retention for TiO 2 (B) nanosheets at high rate. The strategy for fabricating and assembling defect-rich TiO 2 (B) nanosheets paves the way for high performance LIBs. Image 1 • A template-free hydrothermal method is employed to construct 3D-scaffold structure. • Defect-rich TiO 2 (B) nanosheets-based free-standing film is successfully obtained. • The defect-rich nanosheets-based electrode exhibits outstanding cycling stability. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03787753
Volume :
448
Database :
Academic Search Index
Journal :
Journal of Power Sources
Publication Type :
Academic Journal
Accession number :
141293005
Full Text :
https://doi.org/10.1016/j.jpowsour.2019.227458