Back to Search
Start Over
Gate driver for parallel connection SiC MOSFETs with over-current protection and dynamic current balancing scheme.
- Source :
-
Journal of Power Electronics . Jan2020, Vol. 20 Issue 1, p319-328. 10p. - Publication Year :
- 2020
-
Abstract
- In this paper, a SiC MOSFETs gate driver for parallel connections is proposed and implemented. The proposed design enhances the reliability of parallel-connected SiC MOSFETs in high-frequency applications. High-speed over-current protections are applied for both over-voltage and under-voltage situations. In addition, a dynamic balancing current sharing scheme for SiC MOSFETs is proposed for high-speed parallel applications by current feedback and switching delay time compensation. With the proposed design, parallel-connected SiC MOSFETs can work at an operation frequency of 1 MHz with over-current protections. In addition, with the dynamic current balancing scheme, the operation temperature decreases from 115 to 86.9 °C, while the temperature difference for paralleled devices drops from 25.8 to 1.8 °C. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15982092
- Volume :
- 20
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Power Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 141339907
- Full Text :
- https://doi.org/10.1007/s43236-019-00026-1