Back to Search
Start Over
Selective Epitaxy of Submicron GaN Structures.
- Source :
-
Semiconductors . Dec2019, Vol. 53 Issue 16, p2118-2120. 3p. - Publication Year :
- 2019
-
Abstract
- The effect of the growth temperature and the flow of trimethylgallium on the process of selective epitaxy of gallium nitride in windows of submicron size have been studied. The conditions under which homogeneous nucleation and coalescence of nuclei are combined with a low growth rate are determined. The steady growth of variously oriented gallium nitride strips with a height of 50 nm and a width of 600 nm was realized. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10637826
- Volume :
- 53
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 141413267
- Full Text :
- https://doi.org/10.1134/S1063782619120157