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Investigation of the electronic structure of amorphous SnO film using x-ray absorption spectroscopy.
- Source :
-
Applied Physics Letters . 2/3/2020, Vol. 116 Issue 5, p1-5. 5p. 1 Diagram, 3 Graphs. - Publication Year :
- 2020
-
Abstract
- The electronic structure of an amorphous SnO (a-SnO) thin film was examined by using spectroscopic methods including tender and soft x-ray absorption spectroscopies (XAS) and spectroscopic ellipsometry (SE). XAS at the Sn L1−, L3−, and O K-edges revealed that in a-SnO, the Sn 5px/y orbital states, which comprise the conduction band minimum (CBM), are broadened significantly compared to the case of crystalline SnO, whereas the hybridized Sn 5spz-O 2p states above the CBM are persistent. A lowering of the 5px/y states at the CBM by −0.4 eV and a reduction of the indirect bandgap were also observed. These orbital-dependent evolutions upon amorphization were caused by weakened interlayer couplings in the disordered quasi-2-dimensional semiconductor. However, the functionality of a-SnO as a p-type semiconductor would not be degraded significantly because the isotropic Sn 5s orbital states dominate in the valence band states. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 116
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 141625715
- Full Text :
- https://doi.org/10.1063/1.5140518